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      NXP Semiconductors 1PS76SB10 Schottky barrier single diode 1PS76SB10 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2012. All rights reserved Product data sheet 18 July 2012 4 / 8 0 0 10 20 30 5 10 15 VR (V) Cd (pF) msa891 f = 1 MHz; Tamb = 25 °C Fig. 3. Diode capacitance as a function of reverse voltage; typical values 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 03-12-17 Dimensions in mm 0.25 0.10 0.45 0.15 2.7 2.3 1.8 1.6 0.40 0.25 1.1 0.8 1.35 1.15 1 2 Fig. 4. SOD323 |